ferroelectric ram การใช้

• An alternative memory ready for use is ferroelectric RAM ( FRAM or FeRAM ).
• This can be used to store information in ferroelectric capacitors, elements of ferroelectric RAM.
• This gives a non-volatile memory comparable to ferroelectric RAM technologies and offer the same functionality as flash memory.
• Other contenders included magnetoresistive random-access memory ( MRAM ), phase-change memory ( PCRAM ) and ferroelectric RAM ( FeRAM ).
• To date, the only such system to enter widespread production is ferroelectric RAM, or F-RAM ( sometimes referred to as FeRAM ).
• The spontaneous polarization of ferroelectric materials implies a hysteresis effect which can be used as a memory function, and ferroelectric capacitors are indeed used to make ferroelectric RAM for computers and RFID cards.
• Ramtron International has developed, produced, and licensed ferroelectric RAM ( F-RAM ), and other companies that have licensed and produced F-RAM technology include Texas Instruments, Rohm, and Fujitsu.
• PZT thin films have attracted attention for applications such as force sensors, accelerometers, gyroscopes actuators, tunable optics, micro pumps, ferroelectric RAM, display systems and smart roads, when energy sources are limited, energy harvesting plays an important role in the environment.
• "' Ferroelectric RAM "'( "'FeRAM "', "'F-RAM "'or "'FRAM "') is a random-access memory similar in construction to DRAM but ( instead of a dielectric layer like in DRAM ) contains a thin ferroelectric film of lead zirconate titanate [ Pb ( Zr, Ti ) O 3 ], commonly referred to as PZT . The Zr / Ti atoms in the PZT change polarity in an electric field, thereby producing a binary switch.